TCED1100(g) up to tced4100 vishay semiconductors rev. a3, 11jan99 1 (10) optocoupler with photodarlington output description the TCED1100/ tced2100/ tced4100 consists of a phototransistor optically coupled to a gallium arse- nide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package. the elements are mounted on one leadframe using a coplanar technique , providing a fixed distance between input and output for highest safety requirements. applications circuits for safe protective separation against electrical shock according to safety class ii (reinforced isolation): for appl. class i iv at mains voltage 300 v for appl. class i iii at mains voltage 600 v according to vde 0884, table 2, suitable for: switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. vde standards these couplers perform safety functions according to the following equipment standards: vde 0884 optocoupler for electrical safety requirements iec 950/en 60950 office machines (applied for reinforced isolation for mains voltage 400 v rms ) vde 0804 telecommunication apparatus and data processing iec 65 safety for mains-operated electronic and related household apparatus 14925 coll. emitter anode cath. 4 pin 8 pin 16 pin 14580 c order instruction ordering code ctr ranking remarks TCED1100/ TCED1100g 1) 600% 4 pin = single channel tced2100 600% 8 pin = dual channel tced4100 600% 16 pin = quad channel 1) g = leadform 10.16 mm; g is not marked on the body
TCED1100(g) up to tced4100 vishay semiconductors rev. a3, 11jan99 2 (10) features approvals: bsi : bs en 41003, bs en 60095 (bs 415), bs en 60950 (bs 7002), certificate number 7081 and 7402 fimko (seti): en 60950, certificate number 11992 u nderwriters l aboratory (ul) 1577 recognized, file number e-76222 double protection csa (cul) 1577 recognized, file number e-76222 double protection vde 0884, certificate number 115667 vde 0884 related features: rated impulse voltage (transient overvoltage) v iotm = 8 kv peak isolation test voltage (partial discharge test voltage) v pd = 1.6 kv rated isolation voltage (rms includes dc) v iowm = 600 v rms (848 v peak) rated recurring peak voltage (repetitive) v iorm = 600 v rms creepage current resistance according to vde 0303/iec 112 c omparative t racking i ndex: cti 175 thickness through insulation 0.75 mm internal creepage distance > 4 mm general features: isolation materials according to ul94-vo pollution degree 2 (din/vde 0110 / resp. iec 664) climatic classification 55/100/21 (iec 68 part 1) special construction: therefore, extra low coupling capacity of typical 0.2 pf, high c ommon m ode r ejection low temperature coefficient of ctr g = leadform 10.16 mm; provides creepage distance > 8 mm, for tced2100/ tced4100 optional; suffix letter `g' is not marked on the optocoupler coupling system u absolute maximum ratings input (emitter) parameter test conditions symbol value unit reverse voltage v r 6 v forward current i f 60 ma forward surge current t p 10 s i fsm 1.5 a power dissipation t amb 25 c p v 100 mw junction temperature t j 125 c output (detector) parameter test conditions symbol value unit collector emitter voltage v ceo 35 v emitter collector voltage v eco 7 v collector current i c 80 ma collector peak current t p /t = 0.5, t p 10 ms i cm 100 ma power dissipation t amb 25 c p v 150 mw junction temperature t j 125 c coupler parameter test conditions symbol value unit ac isolation test voltage (rms) t = 1 min v io 5 kv total power dissipation t amb 25 c p tot 250 mw operating ambient temperature range t amb 40 to +100 c storage temperature range t stg 55 to +125 c soldering temperature 2 mm from case t 10 s t sd 260 c
TCED1100(g) up to tced4100 vishay semiconductors rev. a3, 11jan99 3 (10) electrical characteristics (t amb = 25 c) input (emitter) parameter test conditions symbol min. typ. max. unit forward voltage i f = 20 ma v f 1.15 1.4 v junction capacitance v r = 0 v, f = 1 mhz c j 50 pf output (detector) parameter test conditions symbol min. typ. max. unit collector emitter voltage i c = 1 ma v ceo 32 v emitter collector voltage i e = 100 a v eco 7 v collector emitter cut-off current v ce = 10 v, i f = 0, e = 0 i ceo 15 100 na coupler parameter test conditions symbol min. typ. max. unit collector emitter saturation voltage i f = 20 ma, i c = 5 ma v cesat 1 v cut-off frequency v ce = 5 v, i f = 10 ma, r l = 100 f c 10 khz coupling capacitance f = 1 mhz c k 0.3 pf current transfer ratio (ctr) parameter test conditions type symbol min. typ. max. unit i c /i f v ce = 2 v, i f = 1 ma TCED1100(g)/ tced2100/ tced4100 ctr 6.0 8.0
TCED1100(g) up to tced4100 vishay semiconductors rev. a3, 11jan99 4 (10) maximum safety ratings (according to vde 0884) see figure 1 this device is used for protective separation against electrical shock only within the maximum safety ratings. this must be ensured by using protective circuits in the applications. input (emitter) parameters test conditions symbol value unit forward current i si 130 ma output (detector) parameters test conditions symbol value unit power dissipation t amb 25 c p si 265 mw coupler parameters test conditions symbol value unit rated impulse voltage v iotm 8 kv safety temperature t si 150 c insulation rated parameters (according to vde 0884) parameter test conditions symbol min. typ. max. unit partial discharge test voltage routine test 100%, t test = 1 s v pd 1.6 kv partial discharge test voltage t tr = 60 s, t test = 10 s, v iotm 8 kv partial discharge test voltage lot test (sample test) t tr 60 s, t test 10 s, (see figure 2) v pd 1.3 kv insulation resistance v io = 500 v r io 10 12 insulation resistance v io = 500 v, t amb = 100 c r io 10 11 v io = 500 v, t amb = 150 c (construction test only) r io 10 9 0 25 50 75 125 0 50 100 150 200 300 p total power dissipation ( mw ) tot t amb ambient temperature ( c ) 150 14887 100 250 photodarlington psi ( mw ) ir-diode isi ( ma ) figure 1. derating diagram v iotm v pd v iowm v iorm v t 4 t 3 t test t stres t 2 t 1 t 0 13930 t tr = 60 s t 1 , t 2 = 1 to 10 s t 3 , t 4 = 1 s t test = 10 s t stres = 12 s figure 2. test pulse diagram for sample test according to din vde 0884
TCED1100(g) up to tced4100 vishay semiconductors rev. a3, 11jan99 5 (10) switching characteristics parameter test conditions symbol typ. unit rise time v cc = 2 v, i c = 10 ma, r l = 100 (see figure 3) t r 300 s fall time v cc 2 v, i c 10 ma, r l 100 (see figure 3) t f 250 s c i channel i channel ii 50 + v cc oscilloscope r i 1 m 20 pf i c = 10 ma ; adjusted through input amplitude i f r g = 50 t 1 = 1 ms 0 14779 r l t p t 0.01 i f figure 3. test circuit t p t t 0 0 10% 90% 100% t r t d t on t s t f t off i f i c 96 11698 t p pulse duration t d delay time t r rise time t on (= t d + t r ) turn-on time t s storage time t f fall time t off (= t s + t f ) turn-off time figure 4. switching times
TCED1100(g) up to tced4100 vishay semiconductors rev. a3, 11jan99 6 (10) typical characteristics (t amb = 25 c, unless otherwise specified) 0.8 0.9 1.0 1.1 1.2 1.3 0 20406080100 t amb ambient temperature ( c ) 14389 v forward voltage ( v ) f i f =10ma figure 5. forward voltage vs. ambient temperature 0.1 1.0 10.0 100.0 1000.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v f forward voltage ( v ) 14390 f i forward current ( ma ) figure 6. forward current vs. forward voltage 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 3020100 102030405060708090100 t amb ambient temperature ( c ) 14391 ctr relative current transfer ratio rel v ce =5v i f =1ma figure 7. relative current transfer ratio vs. ambient temperature 1 10 100 1000 10000 100000 20 30 40 50 60 70 80 90 100 t amb ambient temperature ( c ) 14392 i collector dark current, ceo with open base ( na ) v ce =10v i f =0 figure 8. collector dark current vs. ambient temperature 0.1 1.0 10.0 100.0 1000.0 0.1 1.0 10.0 100.0 i f forward current ( ma ) 14393 v ce =2v i collector current ( ma ) c figure 9. collector current vs. forward current 0.1 1.0 10.0 100.0 0.1 1.0 10.0 100.0 v ce collector emitter voltage ( v ) 14394 i collector current ( ma ) c 1ma 0.5ma 0.2ma 0.1ma i f =2ma figure 10. collector current vs. collector emitter voltage
TCED1100(g) up to tced4100 vishay semiconductors rev. a3, 11jan99 7 (10) 0.6 0.7 0.8 0.9 1.0 1.1 1 10 100 i c collector current ( ma ) 14395 v collector emitter saturation voltage ( v ) cesat ctr=200% 25% 50% 100% figure 11. collector emitter saturation voltage vs. collector current ed1100 820utk63 type date code coupling system indicator company logo production location 15084 pin 1 indication (ym) figure 12. marking example 10 100 1000 10000 0.1 1.0 10.0 100.0 i f forward current ( ma ) 14396 v ce =2v ctr current transfer ratio ( % ) figure 13. current transfer ratio vs. forward current
TCED1100(g) up to tced4100 vishay semiconductors rev. a3, 11jan99 8 (10) dimensions of TCED1100 in mm 96 12231 weight: ca. 0.25 g creepage distance: 6 mm air path: 6 mm after mounting on pc board dimensions of TCED1100g in mm 9612234 weight: ca. 0.25 g creepage distance: 8 mm air path: 8 mm after mounting on pc board leadform 10.16 mm (g_type)
TCED1100(g) up to tced4100 vishay semiconductors rev. a3, 11jan99 9 (10) dimensions of tced2100 in mm 96 12228 weight: ca. 0.5 g creepage distance: 6 mm air path: 6 mm after mounting on pc board dimensions of tced4100 in mm 96 12227 weight: ca. 1.1 g creepage distance: 6 mm air path: 6 mm after mounting on pc board
TCED1100(g) up to tced4100 vishay semiconductors rev. a3, 11jan99 10 (10) ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol ( 1987) and its london amendments ( 1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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